Rohde & Schwarz Inc.

Characterizing Parasitic Components in Power Converters

Published by Rohde & Schwarz Inc.

The increased use of wide bandgap semiconductors like GaN and SiC in power converters enables high-power-density supplies with low switching losses and improved efficiency. Yet, benefits of these fast-switching transistors can be hindered without addressing parasitics at high frequencies.

The white paper introduces parasitics, describes their presence in passive components, and demonstrates using the R&S®LCX200 LCR meter.

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Related Categories Test & Measurement, Components, Power, Semiconductors, Resistors, Capacitors, Inductors, Transformers, PCB