Rohde & Schwarz Inc.
flow-image

Characterizing Parasitic Components in Power Converters

Published by Rohde & Schwarz Inc.

The increased use of wide bandgap semiconductors like GaN and SiC in power converters enables high-power-density supplies with low switching losses and improved efficiency. Yet, benefits of these fast-switching transistors can be hindered without addressing parasitics at high frequencies.

The white paper introduces parasitics, describes their presence in passive components, and demonstrates using the R&S®LCX200 LCR meter.

Download Now

box-icon-download

Required fields*

Please agree to the conditions

By requesting this resource you agree to our terms of use. All data is protected by our Privacy Notice. If you have any further questions please email dataprotection@headleymedia.com.

Related Categories Test & Measurement, Components, Power, Semiconductors, Resistors, Capacitors, Inductors, Transformers, PCB