Everspin Technologies
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Toggle and Spin-Torque MRAM: Status and Outlook

Published by Everspin Technologies

Everspin Technologies review the development of MRAM technology at Everspin, focusing on both toggle MRAM, which is used in our current commercial products, and spin-torque MRAM, which offers significant potential for cell size reduction that could enable higher memory densities.

Toggle MRAM uses magnetic fields for programming the bits with a particular free layer structure, bit orientation, and write pulse sequence to avoid the half-select disturbs present in other field-writing techniques. 

Download this whitepaper to find out more. 

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